Insulated matapa Bipolar Transistor (IGBT) ʻOku lahi hono fakaʻaongaʻí ʻi he ngaahi tafaʻaki kehekehe hangē ko e fetuʻutakí, fefonongaʻaki, mo e mālohí, pea ʻoku fakatupulaki ia ki he voltage maʻolunga, tuʻo lahi, mo e mālohi māʻolungá. ʻOku hanga ʻe he ngaahi fie maʻu ki he malu maʻolunga ʻo e ngaahi polokalama ʻi ʻolunga ʻo fakatupulaki ʻa e ngaahi fie maʻu falalaʻanga ʻo e IGBT. Ko ia, vakaiʻi ʻo e Siteiti mo e kikite ʻo e moʻui ʻa e IGBT ʻoku fuʻu mahuʻinga ʻaupito. ʻOku lahi e ngaahi founga ʻo e IGBT taʻelavameʻa, pea ko e mafana ʻo e ʻea ko e tefitoʻi meʻa ia ʻoku ne fakatupu ʻene taʻelavameʻa. Ko ia, Ko hono ʻanalaiso ʻo e thermal ko ha konga mahuʻinga ia ʻo e fakafuofuaʻi ʻo e Siteiti IGBT, mo e fua moʻoni ʻo e IGBT fale ʻoku mahuʻinga lahi ki hono fakaleleiʻi ʻo e founga falalaʻanga.
Ko e voltage maʻolunga mo e malohi maʻolunga thyristors ko e ngaahi konga mahuʻinga ia ʻo e fakaului valves ʻi ultra-maʻolunga voltage pe ultra-maʻolunga voltage fakahangatonu ʻa e ngaahi ngaue ʻoku lolotonga feʻaveʻaki, pea ʻoku uesia fakahangatonu ʻe he tuʻunga moʻui lelei ʻo e thyristors ʻa e malu mo e ala falalaʻanga ʻo e ngaahi ngaue ʻoku lolotonga fai. Lolotonga hono fakalele ʻo e thyristors, ʻOku taʻeleʻeia ʻa e toulekeleka koeʻuhi ko e ngaahi nunuʻa fakataha ʻo e voltage maʻolunga, ʻau maʻolunga, mafana ʻo e ʻea, ʻea hauhau, tetetete fakamisini, mo e hulu, ʻi he ngaahi loto mafasia kehe. ʻOku toe liliu foki ʻa e ngaahi fakangatangata ʻo e thyristors ʻi he toulekeleka. ʻOku mahuʻinga lahi ʻa e mahino fakalukufua ki he ngaahi lao motuʻa mo Parameter maʻulalo ʻo e thyristors ki hono fakafuofuaʻi ʻo e tuʻunga ʻo e thyristors, fokotuʻutuʻu ʻo e ngaahi palani ki hono tokangaʻi fakasaienisi, pea predicting ʻa e toenga ʻo e moʻui ʻa thyristors.
ʻI heʻene hoko ko ha voltage mo ha matapa voltage maʻolunga, ʻOku fakapapauʻi fakahangatonu ʻe he ngaue angamaheni ʻo e IGBT ʻa e tuʻunga ngaue ʻo e compressor ʻuhila. Ko e taʻelavameʻa IGBT ko e taha ia ʻo e ngaahi tefitoʻi palopalema ʻi he maketi fefakatauʻaki ʻo e compressors ʻuhila ki he ngaahi meʻalele ʻuhila. ʻOku kau ʻi he ngaahi founga taʻelavameʻa ʻa e IGBT mo e ngaahi vahaʻa taimi nounou, ʻa ia ʻoku kau ai ʻa e ngaahi tefitoʻi tupuʻanga ʻo ʻene taʻelavameʻa. ʻI he taimi ni, ʻOku tanaki atu ʻe he kau faʻu koloa lahi taha ʻa e IGBT maluʻi (maluʻi hulu) pea IGBT maluʻi ʻa e ʻea vela ki he founga puleʻi compressor ʻo makatuʻunga ʻi he founga taʻelavameʻa ʻo e IGBT. Neongo ia, Naʻe ʻikai fekauʻaki ʻa e ngaahi founga maluʻi ko ʻeni kimuʻa, pea ʻe lava ke ngaue ʻa e IGBT ʻi ha taimi loloa ʻi he mafana ʻo e ʻea mo e ʻea maʻolunga, ʻa ia ʻoku ne fakasiʻisiʻi ʻa e moʻui tokoni ʻa IGBT. ʻIkai ngata ai, ʻe fakangatangata ʻe he founga maluʻi ko ʻeni ʻa e ngaue lolotonga ʻo e IGBT, ʻo fakangatangata ai ʻa e malohi Output ʻo e moto.
ʻI he hokohoko atu ʻa e ivi ʻo e kemikale mo e intensification ʻo e ʻatakai ʻuli, Kuo fakautuutu e taʻu ki he taʻu hono vahevahe ʻe he maketi ʻa e ngaahi meʻalele ʻuhila. Ko e tefitoʻi konga ia ʻo e ngaahi meʻalele ʻuhila, ʻOku ʻomi ʻe he pule ʻo e moto ha ivi fakaʻuli ki he meʻalele kotoa. Insulated matapa ʻavanga femaleleaki transistor (IGBT) fakahoko ha fatongia mahuʻinga ko e konga mahuʻinga ʻo hono puleʻi. Koeʻuhi ko e malohi maʻolunga ʻo e moto fakaʻuli ʻoku fakaʻaongaʻi ʻi he ngaahi meʻalele ʻuhila mo e ʻatakai ngaue fefeka, ʻOku fie maʻu ʻa e IGBT ʻeni ke ne tokangaʻi ʻa e ngaahi ʻau lalahi. ʻOku fie maʻu heni ʻa e IGBT ʻeni ke ʻi ai ha vela lelei dissipation malava pea lava ke ne matuʻuaki ʻa e mafana ʻo e ʻea.
Ko e ngaahi meʻangaue malohi Semiconductor ʻoku fakafofongaʻi ʻe IGBT ko e taha ia ʻo e ngaahi tefitoʻi konga ʻo e inverters pea ko e taha foki ia ʻo e ngaahi tefitoʻi konga fakamafana. ʻOku matuʻaki mahuʻinga ʻaupito ʻenau tokangaʻi ʻo e thermal pea ʻoku ne uesia lahi ʻa e lifespan ʻo e ngaahi meʻangaue mo e moʻui fakaʻaongaʻi ʻo e inverters. ʻOku uesia pe ʻe he ʻea vela ʻa e lifespan ʻo e ngaahi meʻangaue IGBT mei ha tafaʻaki ʻe ua ʻo e ʻea. Firstly, ʻa e mafana ʻo e ʻea. Lolotonga, Ko e lahi taha ʻo e mafana ʻo e ʻea ki he ngaahi meʻangaue IGBT lalahi ʻoku meimei ko e 150 ° C, mo ha kiʻi konga siʻi ke aʻu ki ai 175 ° C. Kapau ʻoku lahi hake ʻa e mafana ʻo e ʻea, he ʻikai lava ke fakapapauʻi ʻa e ala falalaʻanga ʻo e meʻangaue pea ʻoku faingofua ke taʻe-malava; Ko hono ua ko e mafana ʻo e ʻea fluctuation pe mafana ʻo e ʻea, koeʻuhi he ʻoku ʻi he ngaahi meʻangaue IGBT ha ngaahi naunau lahi ʻi loto, pea ʻoku kehekehe pe ʻa e lahi ʻo e mafola ʻa e naunau takitaha. ʻOku fakatupu ʻe he mafana fluctuations ʻa e meʻangaue ke toutou fakalahi mo aleapau, pea ʻoku kehekehe pe ʻa e tuʻunga ʻo e fakalahi mo e ʻe ʻa ʻo e ngaahi naunau kehekehe. ʻE lava ke iku ʻa e mafana ʻo e ʻea fluctuations ki he IGBT device koeʻuhi ko e ongosia. ʻOku fakaʻata ʻe he ngaahi meʻangaue IGBT ʻa e mafana ke vakaiʻi ʻi he inverters lolotonga, pea ʻoku ʻi ai ha tafaʻaki pau ʻi he fokotuʻutuʻu ʻo e koloa; Neongo ia, ʻOku faʻa taʻefakatokangaʻi ʻa e mafana fluctuations, pea naʻa mo e taimi ʻoku tokanga ai ki he mafana fluctuations, Ko e tefitoʻi fakakaukau ke fakaʻehiʻehi mei IGBT fale mafana ʻa e mafana ʻo e ʻea lolotonga fluctuations, kae ʻikai tokanga taha ki he mafana ʻo e moʻui. ʻOku tupu ʻeni he ʻoku fekauʻaki vaofi ʻa e ongosia ʻo e ngaahi meʻangaue ʻoku fakatupu ʻe he mafana fluctuations mo e tuʻo lahi mo e amplitude ʻo e fluctuations, pea ko ha founga ia ʻoku tanaki taimi loloa.
ʻOku ʻomi ʻe he FJINNO ha maama tiupi filo optic e meʻangaue ki hono fua ʻo e ʻea ʻe lava ke aʻusia fakahangatonu ai ʻa e filo IGBT optic e fua ʻo e ʻea, thyristor filo optic e fua ʻo e ʻea, mo thyristor filo optic e fua ʻo e ʻea.
Filo optic e ʻea sensor resistance, Founga vakaiʻi ʻo e ʻatamai poto, Tufaki e filo optic ʻi Siaina
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