How to monitor temperature with IGBT thyristor

Fiberoptisk temperatursensor, Intelligent overvåkingssystem, Distribuert fiberoptisk produsent i Kina

Insulated Gate Bipolar Transistor (IGBT) is widely used in various fields such as communication, transportation, and power, and is developing towards high voltage, high frequency, and high power. The high safety requirements of the above systems increase the reliability requirements of IGBT. Derfor, state monitoring and life prediction of IGBT are extremely important. There are many forms of IGBT failure, and temperature is the main factor causing its failure. Derfor, thermal analysis is an important part of IGBT state evaluation, and real-time measurement of IGBT junction temperature is of great significance for improving system reliability.

High voltage and high-power thyristors are key components of converter valves in ultra-high voltage or ultra-high voltage direct current transmission projects, and the health status of thyristors directly affects the safety and reliability of direct current transmission projects. During the operation of thyristors, aging is inevitable due to the combined effects of high voltage, høy strøm, temperature, humidity, mechanical vibration, og stråling, among other stresses. The performance parameters of thyristors also change with aging. A comprehensive understanding of the aging and parameter degradation laws of thyristors is of great significance for evaluating the state of thyristors, formulating scientific maintenance plans, and predicting the remaining life of thyristors.

As a low-voltage and high-voltage gate circuit, the normal operation of IGBT directly determines the working state of the electric compressor. IGBT-feil er et av hovedproblemene i ettersalgsmarkedet for elektriske kompressorer for elektriske kjøretøy. Feilmodusene inkluderer hovedsakelig IGBT-sammenbrudd og kortslutning, blant annet IGBT-overstrøm og overoppheting er hovedårsakene til svikt. Nå, de fleste produsenter legger til IGBT-overstrømsbeskyttelse (Beskyttelse mot overbelastning) og IGBT-overopphetingsbeskyttelse til kompressorkontrollstrategien basert på feilmodusen til IGBT. Imidlertid, Disse beskyttelsesstrategiene var ikke knyttet til hverandre før, og IGBT kan fungere lenge under høy strøm og høy temperatur, som utvilsomt reduserer levetiden til IGBT. Dessuten, denne beskyttelsesmetoden vil begrense arbeidsstrømmen til IGBT, og begrenser dermed motorens effekt.

With the continuous depletion of chemical energy and the intensification of environmental pollution, the market share of electric vehicles has been increasing year by year. As the core component of electric vehicles, the motor controller provides driving force for the entire vehicle. Insulated gate bipolar transistor (IGBT) plays an important role as the core component of its control part. Due to the high power of the driving motor used in electric vehicles and the harsh working environment, IGBT modules are required to handle large currents. This requires IGBT modules to have good heat dissipation capabilities and be able to withstand high operating temperatures.

Semiconductor power devices represented by IGBT are one of the core components of inverters and also one of the main heating components. Their thermal management is extremely important and greatly affects the lifespan of the devices and the usable life of the inverters. Heat mainly affects the lifespan of IGBT devices from two temperature aspects. Firstly, the allowable temperature. Currently, the maximum allowable temperature for industrial IGBT devices is mostly 150 °C, with a small portion reaching 175 °C. If the allowable temperature is exceeded, the reliability of the device cannot be guaranteed and it is easy to fail; The second is temperature fluctuation or temperature cycling, because IGBT devices contain multiple materials inside, and each material has a different thermal expansion rate. Temperature fluctuations cause the device to repeatedly expand and contract, and the degree of expansion and contraction of different materials varies. Hyppige temperatursvingninger kan føre til feil på IGBT-enheten på grunn av termisk tretthet. IGBT-enheter gjør det mulig å overvåke temperaturen i strømomformere, og det er en viss margin i produktdesign; Imidlertid, temperatursvingninger blir ofte oversett, og selv når du tar hensyn til temperatursvingninger, hovedhensynet er å unngå at IGBT-krysstemperaturer overstiger den tillatte temperaturen under svingninger, i stedet for å fokusere på temperatursyklusens levetid. Dette er fordi den termiske trettheten til enheter forårsaket av temperatursvingninger er nært knyttet til frekvensen og amplituden til svingninger, og er en langsiktig akkumuleringsprosess.

FJINNO gir en fluorescerende Fiberoptisk temperaturmålingsenhet som direkte kan oppnå IGBT fiberoptisk temperaturmåling, thyristor fiber optic temperature measurement, and thyristor fiber optic temperature measurement.